Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride.
نویسندگان
چکیده
Room-temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are promising for scalable quantum technologies.
منابع مشابه
Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport
Photoluminescence (PL) studies in GaN thin films grown by infrared close space vapor transport (CSVT-IR) in vacuum are presented in this work. The growth of GaN thin films was done on a variety of substrates like silicon, sapphire and fused silica. Room temperature PL spectra of all the GaN films show near band-edge emission (NBE) and a broad blue and green luminescence (BL, GL), which can be s...
متن کاملTemperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots
We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (% 8.5 meV) is comparable to the ensemble inhomogeneous broadening (% 12.4 meV). At low temperature (T £ 40 K) photon correlation measurements under continuous wave excitation show nearly perfect sin...
متن کاملGreen luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy
Indium gallium nitride nanowires show promise as being prime candidates for optical devices since they can be grown with band gaps spanning the visible spectra, while at the same time can be composed of stress free material. The goal of the work presented here was to obtain InGaN nanowires producing green emission at room temperature. Two growth recipes were found to yield InGaN nanowire growth...
متن کاملUltrafast Room-Temperature Single Photon Emission from Quantum Dots Coupled to Plasmonic Nanocavities.
Efficient and bright single photon sources at room temperature are critical components for quantum information systems such as quantum key distribution, quantum state teleportation, and quantum computation. However, the intrinsic radiative lifetime of quantum emitters is typically ∼10 ns, which severely limits the maximum single photon emission rate and thus entanglement rates. Here, we demonst...
متن کاملTime-resolved Characterization of Non-equilibrium Carrier Dynamics in Gallium Based III-V Materials and Devices
Ga-based III-V materials, such as, GaAs, GaN and AlGaN, have a wide-range of applications in the fields of high-speed, high-temperature, high-power and high-frequency electronic and optoelectronic devices, due to their unique physical properties. This thesis is devoted to the time-resolved characterization of ultrafast, nonequilibrium carrier and phonon dynamics in Ga-based III-V materials and ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Advanced materials
دوره 29 12 شماره
صفحات -
تاریخ انتشار 2017